PMST2222A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST2222; PMST2222A NPN switching transistors Product specification Supersedes data of 1997 Jul 14 1999 Apr 22 Philips Semiconductors Product specification NPN switching transistors FEATURES High current (max. 600 mA) Low voltage (max. 40 V). APPLICATIONS High-speed switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT323 plastic package. PNP complement: PMST2907A. MARKING TYPE NUMBER PMST2222 PMST2222A Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗1B ∗1P handbook, halfpage PMST2222; PMST2222A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 Top view 2 MAM062 Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMST2222 PMST2222A VCEO collector-emitter voltage PMST2222 PMST2222A VEBO emitter-base voltage PMST2222 PMST2222A IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector − − − − − − −65 − −65 5 6 600 800 200 200 +150 150 +150 V V mA mA mA mW °C °C °C open base − − 30 40 V V CONDITIONS open emitter − − 60 75 V V MIN. MAX. UNIT 1999 Apr 22 2 Philips Semiconductors Product specificatio...