DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
PMSS3904 NPN switching transistor
Product specification Super...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
PMSS3904 NPN switching transistor
Product specification Supersedes data of 1997 Sep 03 1999 May 27
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES Low current (max. 100 mA) Low
voltage (max. 40 V). APPLICATIONS General purpose switching and amplification Telephony and professional communication equipment. DESCRIPTION NPN switching transistor in an SC-70 (SOT323) plastic package. PNP complement: PMSS3906. PINNING PIN 1 2 3 base emitter collector
PMSS3904
DESCRIPTION
handbook, halfpage
3
3 1
MARKING CODE TYPE NUMBER PMSS3904 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗04 Fig.1
2
1 Top view 2
MAM062
Simplified outline (SC-70; SOT323) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base
voltage collector-emitter
voltage emitter-base
voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 60 40 6 100 200 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT
1999 May 27
2
Philips Semiconductors
Product specification
NPN switching transistor
THERMAL CHARAC...