PMK27XP

PMK27XP P-channel extremely low level FET M3D315 Rev. 01 — 15 January 2004 Product data 1. Product profile 1.1 Description Extremely low level P-channel enhancement mode field-effect transistor in a plastic package using TrenchDMOS technology. 1.2 Features s Low threshold s Low on-state resistance. 1.3 Applications s Load switching s Laptop computers s Battery packs s Battery powered portable equipment. 1.4 Quick reference data s VDS ≤ −20 V s Ptot ≤ 2.5 W s ID ≤ −6.5 A s RDSon = 27 mΩ (typ). 2. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1 (SO-8), simplified outline and symbol Description source (s) gate (g) drain (d) g 1 Top view 4 MBK187 Simplified outline 8 5 Symbol d s MBB075 SOT 96-1 (SO-8) 3. Ordering information Table 2: Ordering information Package Name PMK27XP S08 Description Plastic surface mounted package; 8 leads Version SOT96-1 Type number Philips Semiconductors PMK27XP P-channel extremely low level FET 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS ID drain-source voltage (DC) drain current Conditions Tamb = 25 °C VGS = −4.5 V; tp < 10s Tamb = 25 °C; Figure 2 Tamb = 70 °C; Figure 2 VGS = −4.5 V; tp > 10s Tamb = 25 °C; Figure 2 Tamb = 70 °C; Figure 2 VGS IDM Ptot Ptot Tstg Tj IS gate-source voltage (DC) peak drain current total power dissipation total power dissipation storage temperature junction temperature source (diode forward) current (DC) T...