PMEM4010PD

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMEM4010PD PNP transistor/Schottky diode module Product specification 2002 Oct 28 www.DataSheet4U.com www.DataSheet4U.com Philips Semiconductors Product specification PNP transistor/Schottky diode module FEATURES 600 mW total power dissipation High current capability Reduces required PCB area Reduced pick and place costs Small plastic SMD package. Transistor: Low collector-emitter saturation voltage. Diode: Ultra high-speed switching Very low forward voltage Guard ring protected. handbook, halfpage 6 PMEM4010PD PINNING PIN 1 2 3 4 5 6 emitter not connected cathode anode base collector DESCRIPTION 5 4 4 3 6 APPLICATIONS DC/DC convertors Inductive load drivers General purpose load drivers Reverse polarity protection circuits. DESCRIPTION Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. NPN complement: PMEM4010ND. Marking code: B2. 5 1 1 2 3 MGU868 Fig.1 Simplified outline (SOT457) and symbol. www.DataSheet4U.com 2002 Oct 28 2 www.DataSheet4U.com Philips Semiconductors Product specification PNP transistor/Schottky diode module LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL NPN transistor VCBO VCEO VEBO IC ICM IBM Tj VR IF IFSM Tj Ptot Tstg Tamb Note collector-...