DISCRETE SEMICONDUCTORS
DATA SHEET
PMEG2015EA Low VF (MEGA) Schottky barrier diode
Product specification Supersedes dat...
DISCRETE SEMICONDUCTORS
DATA SHEET
PMEG2015EA Low VF (MEGA) Schottky barrier diode
Product specification Supersedes data of 2003 May 20 2004 Feb 03
Philips Semiconductors
Product specification
Low VF (MEGA) Schottky barrier diode
FEATURES Forward current: 1.5 A Reverse
voltage: 20 V Ultra high-speed switching Very low forward
voltage Very small plastic SMD package. APPLICATIONS Ultra high-speed switching
Voltage clamping Protection circuits. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEG2015EA − DESCRIPTION plastic surface mounted package; 2 leads
Marking code: S5. The marking bar indicates the cathode.
Top view 1 2
PMEG2015EA
PINNING PIN 1 2 DESCRIPTION cathode anode
1
2
sym001
Fig.1
Simplified outline (SOD323; SC-76) and symbol.
VERSION SOD323
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF IFSM IFRM Tstg Tj Tamb PARAMETER continuous reverse
voltage continuous forward current non-repetitive peak forward current repetitive peak forward current storage temperature junction temperature operating ambient temperature Ts < 55 °C tp = 8 ms square wave tp = 1 ms; δ = ≤ 0.25 CONDITIONS − − − − −65 − −65 MIN. MAX. 20 1.5 10 4.5 +150 125 +125 V A A A °C °C °C UNIT
2004 Feb 03
2
Philips Semiconductors
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