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PMEG2015EA

Philips

Low VF (MEGA) Schottky barrier diode

DISCRETE SEMICONDUCTORS DATA SHEET PMEG2015EA Low VF (MEGA) Schottky barrier diode Product specification Supersedes dat...


Philips

PMEG2015EA

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DISCRETE SEMICONDUCTORS DATA SHEET PMEG2015EA Low VF (MEGA) Schottky barrier diode Product specification Supersedes data of 2003 May 20 2004 Feb 03 Philips Semiconductors Product specification Low VF (MEGA) Schottky barrier diode FEATURES Forward current: 1.5 A Reverse voltage: 20 V Ultra high-speed switching Very low forward voltage Very small plastic SMD package. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEG2015EA − DESCRIPTION plastic surface mounted package; 2 leads Marking code: S5. The marking bar indicates the cathode. Top view 1 2 PMEG2015EA PINNING PIN 1 2 DESCRIPTION cathode anode 1 2 sym001 Fig.1 Simplified outline (SOD323; SC-76) and symbol. VERSION SOD323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF IFSM IFRM Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current non-repetitive peak forward current repetitive peak forward current storage temperature junction temperature operating ambient temperature Ts < 55 °C tp = 8 ms square wave tp = 1 ms; δ = ≤ 0.25 CONDITIONS − − − − −65 − −65 MIN. MAX. 20 1.5 10 4.5 +150 125 +125 V A A A °C °C °C UNIT 2004 Feb 03 2 Philips Semiconductors ...




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