PMEG2010BEV

DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PMEGXX10BEA; PMEGXX10BEV 1 A very low VF MEGA Schottky barrier rectifier Product specification Supersedes data of 2004 Apr 02 2004 Jun 14 Philips Semiconductors Product specification 1 A very low VF MEGA Schottky barrier rectifier FEATURES Forward current: 1 A Reverse voltages: 20 V, 30 V, 40 V Very low forward voltage Ultra small and very small plastic SMD package Power dissipation comparable to SOT23. www.DataSheet4U.com PMEGXX10BEA; PMEGXX10BEV QUICK REFERENCE DATA SYMBOL IF VR PINNING PIN PMEGXX10BEA (see Fig.1) 1 2 PMEGXX10BEV (see Fig.2) 1, 2, 5, 6 3, 4 cathode anode cathode anode DESCRIPTION PARAMETER forward current reverse voltage 1 20; 30; 40 MAX. UNIT A V APPLICATIONS High efficiency DC-to-DC conversion Voltage clamping Protection circuits Low voltage rectification Blocking diodes Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) and ultra small SOT666 SMD plastic package. MARKING TYPE NUMBER PMEG2010BEA PMEG3010BEA PMEG4010BEA PMEG2010BEV PMEG3010BEV PMEG4010BEV MARKING CODE V1 V2 V3 G6 G5 G4 1 2 1 2 sym001 Top view The marking bar indicates the cathode. Fig.1 Simplified outline (SOD323; SC-76) and symbol. 6 5 4 1, 2 5, 6 3, 4 sym038 1 Top view 2 3 Fig.2 Simplified outline (SOT666) and symbol. 2004...