PMD1703K

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1703K DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= -100V(Min) ·Complement to type PMD1603K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE -100 -100 -5.0 -20 -40 -0.5 180 150 -65~200 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case MAX 0.97 UNIT ℃/W isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS PMD1703K MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0 -100 V V(BR)CER Collector-Emitter Breakdown Voltage IC= -100mA; RBE= 2.2kΩ -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.8 V VBE(on) Base-Emitter On Voltage IC= -10A; VCE= -3V -2.8 V ...