DISCRETE SEMICONDUCTORS
DATA SHEET
PMBTH10 NPN 1 GHz general purpose switching transistor
Product specification File un...
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBTH10 NPN 1 GHz general purpose switching transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
FEATURES Low cost High power gain. 1 DESCRIPTION The PMBTH10 is a general purpose silicon npn transistor, encapsulated in a SOT23 plastic envelope. Its pnp complement is the PMBTH81. 2 3 PINNING PIN base emitter collector
1 Top view
PMBTH10
DESCRIPTION Code: V30
fpage
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VCBO VCEO VEBO Ptot hFE Cre Crb fT rbCc PARAMETER collector-base
voltage collector-emitter
voltage emitter-base
voltage total power dissipation DC current gain collector-emitter feedback capacitance collector-base feedback capacitance transition frequency collector-base time constant open base open collector Ts = 45 °C (note 1) VCE = 10 V; IC = 4 mA VCB = 10 V; IE = 0; f = 1 MHz VCB = 10 V; IE = 0; f = 1 MHz VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 °C VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 °C CONDITIONS open emitter MIN. − − − − 60 − 0.35 650 − MAX. 30 25 3 400 − 0.7 0.65 − 9 pF pF MHz ps V V V mW UNIT
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base
voltage collector-emitter
voltage emitter-base
voltage DC collector cu...