PMBTA64

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA64 PNP Darlington transistor Product specification Supersedes data of 1998 Jul 21 1999 Apr 13 Philips Semiconductors Product specification PNP Darlington transistor FEATURES High current (max. 500 mA) Low voltage (max. 30 V) High DC current gain (min. 10000). APPLICATIONS High input impedance preamplifiers. DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complement: PMBTA14. MARKING TYPE NUMBER PMBTA64 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗2V PINNING PIN 1 2 3 base emitter collector PMBTA64 DESCRIPTION handbook, halfpage 3 1 3 TR1 TR2 1 Top view 2 2 MAM299 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 VBE = 0 open collector CONDITIONS open emitter − − − − − − − −65 − −65 MIN. MAX. −30 −30 −10 −500 −800 −200 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 13 2 Philips Semiconductors Product specification PNP Darlington transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Tr...