PMBTA42

PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev. 05 — 12 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92. 1.2 Features „ High voltage (max. 300 V) 1.3 Applications „ Telephony and professional communication equipment 1.4 Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain Conditions open base VCE = 10 V IC = 1 mA IC = 10 mA IC = 30 mA Min Typ Max Unit - - 300 V - - 100 mA 25 40 40 - - 2. Pinning information Table 2. Pin 1 2 3 Pinning Description base emitter collector Simplified outline Graphic symbol 33 12 1 2 sym021 NXP Semiconductors PMBTA42 300 V, 100 mA NPN high-voltage transistor 3. Ordering information 4. Marking Table 3. Ordering information Type number[1] Package Name Description PMBTA42 - plastic surface-mounted package; 3 leads PMBTA42/DG [1] /DG: halogen-free Version SOT23 Table 4. Marking codes Type number[1] PMBTA42 PMBTA42/DG [1] /DG: halogen-free [2] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Marking code[2] *1D *BV Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min VCBO VCEO VEBO IC ICM IBM Ptot Tj Tamb Tstg collector-base voltage col...