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PMBTA14 Datasheet

Part Number PMBTA14
Manufacturers Philips
Logo Philips
Description NPN Darlington transistors
Datasheet PMBTA14 DatasheetPMBTA14 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA13; PMBTA14 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 18 1999 Apr 29 Philips Semiconductors Product specification NPN Darlington transistors FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • High DC current gain (min. 10000). APPLICATIONS • High input impedance preamplifiers. DESCRIPTION NPN Darlington transistor in a SOT23 plastic package. PNP complement: PMBTA64. MARKING 1 PMBT.

  PMBTA14   PMBTA14






Part Number PMBTA13
Manufacturers Philips
Logo Philips
Description NPN Darlington transistors
Datasheet PMBTA14 DatasheetPMBTA13 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA13; PMBTA14 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 18 1999 Apr 29 Philips Semiconductors Product specification NPN Darlington transistors FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • High DC current gain (min. 10000). APPLICATIONS • High input impedance preamplifiers. DESCRIPTION NPN Darlington transistor in a SOT23 plastic package. PNP complement: PMBTA64. MARKING 1 PMBT.

  PMBTA14   PMBTA14







NPN Darlington transistors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA13; PMBTA14 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 18 1999 Apr 29 Philips Semiconductors Product specification NPN Darlington transistors FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • High DC current gain (min. 10000). APPLICATIONS • High input impedance preamplifiers. DESCRIPTION NPN Darlington transistor in a SOT23 plastic package. PNP complement: PMBTA64. MARKING 1 PMBTA13; PMBTA14 PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 1 3 TR1 TR2 2 2 MAM298 TYPE NUMBER PMBTA13 PMBTA14 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗1M ∗1N Top view Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 VBE = 0 open collector CONDITIONS open emitter − − − − − − − −65 − −65 MIN. MAX. 30 30 10 500 800 200 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 29 2 Philips Semiconductors Product specification NPN Darlington transistors THERMAL CHARACTERISTI.


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