DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBTA06 NPN general purpose transistor
Product specification ...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBTA06 NPN general purpose transistor
Product specification Supersedes data of 1998 Jul 20 1999 Apr 29
Philips Semiconductors
Product specification
NPN general purpose transistor
FEATURES High current (max. 500 mA) Low
voltage (max. 80 V). APPLICATIONS General purpose switching and amplification in e.g. telephony and professional communication equipment. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: PMBTA56.
handbook, halfpage
PMBTA06
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1
MARKING TYPE NUMBER PMBTA06 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) ∗1G
Top view
1
2
MAM255
2
Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base
voltage collector-emitter
voltage emitter-base
voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 80 80 4 500 1 200 250 +150 150 +150 V V V mA A mA mW °C °C °C UNIT
1999 Apr 29
2
Philips Semiconductors
Product specification
NPN general purpose transistor
THERMAL CHARACTERISTICS SYMBO...