PMBT3904D

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMBT3904D NPN switching double transistor Product specification 1999 Dec 15 Philips Semiconductors Product specification NPN switching double transistor FEATURES Low current (max. 100 mA) Low voltage (max. 40 V) Reduces number of components and board space. APPLICATIONS Telephony and professional communication equipment. DESCRIPTION Two independently operating NPN switching transistors in a SC-74, six lead, SMD plastic package. MARKING TYPE NUMBER PMBT3904D D1 MARKING CODE handbook, halfpage 6 PMBT3904D PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 5 4 6 5 4 TR2 TR1 1 Top view 2 3 MAM432 1 2 3 Fig.1 Simplified outline (SC-74) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per transistor VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Per device Ptot Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. total power dissipation Tamb ≤ 25 °C; note 1 − 600 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open emitter open base open collector − − − − − − −65 − −65 60 40 6 100 200 300 +150 150 +150 V V V mA mA mW °C °C °C PARAMETER CONDITIONS MIN. MAX. UNIT 1999 Dec 1...