PMBT2907A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT2907; PMBT2907A PNP switching transistors Product specification Supersedes data of 1997 Sep 04 1999 Apr 27 Philips Semiconductors Product specification PNP switching transistors FEATURES High current (max. 600 mA) Low voltage (max. 60 V). APPLICATIONS Switching and linear amplification. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complements: PMBT2222 and PMBT2222A. MARKING TYPE NUMBER PMBT2907 PMBT2907A Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗2B ∗2F Top view handbook, halfpage PMBT2907; PMBT2907A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage collector-emitter voltage PMBT2907 PMBT2907A VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector open base − − − − − − − −65 − −65 −40 −60 −5 −600 −800 −200 250 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter − MIN. MAX. −60 UNIT V 1999 Apr 27 2 Philips Semiconductors Product specification PNP switching transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed...