DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBT2907; PMBT2907A PNP switching transistors
Product specifi...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBT2907; PMBT2907A PNP switching transistors
Product specification Supersedes data of 1997 Sep 04 1999 Apr 27
Philips Semiconductors
Product specification
PNP switching transistors
FEATURES High current (max. 600 mA) Low
voltage (max. 60 V). APPLICATIONS Switching and linear amplification. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complements: PMBT2222 and PMBT2222A. MARKING TYPE NUMBER PMBT2907 PMBT2907A Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗2B ∗2F
Top view
handbook, halfpage
PMBT2907; PMBT2907A
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1 2 1 2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base
voltage collector-emitter
voltage PMBT2907 PMBT2907A VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base
voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector open base − − − − − − − −65 − −65 −40 −60 −5 −600 −800 −200 250 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter − MIN. MAX. −60 UNIT V
1999 Apr 27
2
Philips Semiconductors
Product specification
PNP switching transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed...