PMBFJ175

PMBFJ174; PMBFJ175; PMBFJ176; PMBFJ177 P-channel silicon field-effect transistors Rev. 3.0 — 24 January 2020 Product data sheet 1 Product profile 1.1 General description Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. 1.2 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS VGSo -IG Ptot drain-source voltage gate-source voltage gate current total power dissipation up to Tamb = 25 ° C -IDSS drain current -VDS = 15 V; VGS = 0 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 RDS on drain-source ONresistance -VDS = 0.1 V; VGS = 0 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 Min Typ Max Unit 30 - 30 V - - 30 V - - 50 mA - - 300 mW 20 721.5 - ----- 135 mA 70 mA 35 mA 20 mA 85 Ω 125 Ω 250 Ω 300 Ω NXP Semiconductors 2 Pinning information Table 2. Pinning Pin Description[1] 1 drain 2 source 3 gate PMBFJ174; PMBFJ175; PMBFJ176; PMBFJ177 P-channel silicon field-effect transistors Simplified outline Symbol 31 32 sym053 12 [1] Drain and source are interchangeable. 3 Ordering information Table 3. Ordering information Type number Package Name Description PMBFJ174 - plastic surface mounted package; 3 leads PMBFJ175 PMBFJ176 PMBFJ177 4 Marking Table 4. Marking Type number PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 [1] * = ma...