SOT23
PMBFJ108; PMBFJ109;
PMBFJ110
N-channel junction FETs
Rev. 4 — 20 September 2011
Product data sheet
1. Product...
SOT23
PMBFJ108; PMBFJ109;
PMBFJ110
N-channel junction FETs
Rev. 4 — 20 September 2011
Product data sheet
1. Product profile
1.1 General description
Symmetrical N-channel junction FETs in a SOT23 package.
1.2 Features and benefits
High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate
voltage (8 for PMBFJ108).
1.3 Applications
Analog switches Choppers and commutators Audio
amplifiers.
2. Pinning information
Table 1. Pin 1 2 3
Pinning Description[1] drain source gate
Simplified outline
3
Symbol
1
2
1
3
2
sym053
[1] Drain and source are interchangeable.
NXP Semiconductors
PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
3. Ordering information
Table 2. Ordering information
Type number Package
Name Description
PMBFJ108
-
plastic surface mounted package; 3 leads
PMBFJ109
PMBFJ110
Version SOT23
4. Marking
Table 3. Marking Type number PMBFJ108 PMBFJ109 PMBFJ110
[1] * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China
5. Limiting values
Marking code[1] 38* 39* 40*
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
drain-source
voltage (DC)
-
VGSO
gate-source
voltage
-
VGDO
gate-drain
voltage
-
IG
forward gate current (DC)
Ptot
total power dissipation
Tstg
storage temperature
Tamb = 25 C
[1] -
65
Tj
junction temperature
-
[1] Mounted on an FR4 printed-circuit board.
Max Un...