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PMBFJ108

NXP

N-channel FET

SOT23 PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 4 — 20 September 2011 Product data sheet 1. Product...


NXP

PMBFJ108

File Download Download PMBFJ108 Datasheet


Description
SOT23 PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features and benefits  High-speed switching  Interchangeability of drain and source connections  Low RDSon at zero gate voltage (8  for PMBFJ108). 1.3 Applications  Analog switches  Choppers and commutators  Audio amplifiers. 2. Pinning information Table 1. Pin 1 2 3 Pinning Description[1] drain source gate Simplified outline 3 Symbol 1 2 1 3 2 sym053 [1] Drain and source are interchangeable. NXP Semiconductors PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs 3. Ordering information Table 2. Ordering information Type number Package Name Description PMBFJ108 - plastic surface mounted package; 3 leads PMBFJ109 PMBFJ110 Version SOT23 4. Marking Table 3. Marking Type number PMBFJ108 PMBFJ109 PMBFJ110 [1] * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China 5. Limiting values Marking code[1] 38* 39* 40* Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min VDS drain-source voltage (DC) - VGSO gate-source voltage - VGDO gate-drain voltage - IG forward gate current (DC) Ptot total power dissipation Tstg storage temperature Tamb = 25 C [1] - 65 Tj junction temperature - [1] Mounted on an FR4 printed-circuit board. Max Un...




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