PM75RSE120 Datasheet - Intelligent Power Module

MITSUBISHI MITSUBISHI MODULES> PM75RSE120 PM75RSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RSE120 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. 3φ 75A, 1200V Current-sense IGBT for 15kHz switching 25A, 1200V Current-sense regenerative brake IGBT Monolithic gate drive & protection logic Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage Acoustic noise-less 11/15kW class inverter application APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 110±1 95±0.5 2-2.54 2-2.54 2-2.54 6-2.54 17.02 10.16 10.16 10.16 3.22 PBT Screwing depth Min9.0 4-φ5.5 MOUNTING HOLES Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UP VUP1 VVPC VP VVP1 VWPC WP VWP1 VNC 11. 12. 13. 14. 15. 16. VN1 Br UN VN WN FO 20 2±0.5 17 123 4 56 78 9 10 12 14 16 11 13 15 74±0.5 20 P 17.5 12 N W 89±1 V U 0.5±0.3 24.5 4-R6 26 67.4 160.64 2-φ2.54 26 6-M5NUTS 21.2 22 –0.5 +1.0 3.22 2-2.54 4.5 0.64 A : DETAIL 11.6 32.6 31.6 19.4 LABEL 4 22 1.6 10.6 A 10 B φ2.54 Sep. 2001 MITSUBISHI PM75RSE120 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo=1.5kΩ Br Fo VNC W N VN1 VN UN VWPC...