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MITSUBISHI
PM75B4LB060
FLAT-BASE TYPE INSULATED PACKAGE
PM75B4LB060
FEATURE
a) Adopting new 5th generation IGBT (CSTBT TM ) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1. 55V @Tj=125°C b) Over-temperature protection by detecting Tj of the CSTBT TM chips and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series. • 2φ 75A, 600V Current-sense IGBT type inverter • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, shortcircuit, over-temper...
PM75B4LB060 PDF File
