PPJA87P03
30V P-Channel ENHANCEMENT MODE MOSFET
Voltage Features
30 V
Current
4A
RDS(ON), [email protected],...
PPJA87P03
30V P-Channel ENHANCEMENT MODE
MOSFET
Voltage Features
30 V
Current
4A
RDS(ON),
[email protected],ID@-3A<87 mΩ RDS(ON), VGS@-10V,
[email protected]<55 mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters Low Gate Charge Lead free in comply with EU RoHS 2002/95/EC directives. Green molding compound as per IEC61249 Std. (Halogen Free)
Mechanical Data
Case: SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Apporx. Weight: 0.0003 ounces, 0.0084 grams Marking:87
www.DataSheet.net/
Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted)
PARAMETER Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
(Note 1)
o
SYMBOL VDS VGS Ta=25oC Ta=70 C
o
LIMIT
UNITS V V A A W
o
-30 +20 -4 -3.5 20 1.19 0.75 -55 to +150 125
o
ID IDM
(Note 1)
T a=25 C T a=70 C
o
o
PD TJ,TSTG R θJA
Operating Junction and Storage Temperature Range Thermal resistance Junction to Ambient
(Note 1)
C
C/W
August 31,2012-REV.00
Page 1
Datasheet pdf - http://www.DataSheet4U.co.kr/
PPJA87P03
Electrical Characteristics (TA=25 C unless otherwise noted)
PARAMETER Static Drain-Source Breakdown
Voltage Gate Threshold
Voltage Drain-Source On-State Resistance Zero Gate
Voltage Drain Current Gate-Source Leakage Current Diode Forward
Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output C...
