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PHB6ND50E

NXP

Transistor


Description
Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance Fast reverse recovery diode PHP6ND50E, PHB6ND50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A g ...



NXP

PHB6ND50E

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