PHB110NQ08T
N-channel TrenchMOS standard level FET
Rev. 02 — 12 October 2009 Product data sheet
1. Product profile
1.1 ...
PHB110NQ08T
N-channel TrenchMOS standard level FET
Rev. 02 — 12 October 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC convertors General industrial applications Motors, lamps and solenoids Uninterruptible power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3 Tmb = 25 °C; see Figure 2 Min Typ Max 75 75 230 Unit V A W drain-source
voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation gate-drain charge Symbol Parameter
Dynamic characteristics QGD VGS = 10 V; ID = 25 A; VDS = 60 V; Tj = 25 °C; see Figure 11 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 9 and 10 48.2 nC
Static characteristics RDSon drain-source on-state resistance 7.7 9 mΩ
NXP Semiconductors
PHB110NQ08T
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain
2 1 3
[1]
Simplified outline
mb
Graphic symbol
D
G
mbb076
S
SOT404 (D2PAK)
[1] It is not possible to make a c...