PH9030L

PH9030L N-channel TrenchMOS logic level FET Rev. 01 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ DC-to-DC convertors „ Notebook computers „ Portable equipment „ Switched-mode power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max 30 63 62.5 Unit V A W drain-source voltage 25 °C ≤ Tj ≤ 150 °C drain current total power dissipation gate-drain charge Symbol Parameter Dynamic characteristics QGD VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 10; see Figure 11 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 8; see Figure 9 3.2 nC Static characteristics RDSon drain-source on-state resistance 7 9 mΩ www.DataSheet4U.com NXP Semiconductors PH9030L N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1,2,3 4 mb S G D Pinning information Symbol Description source gate mounting base; connected to drain 1 2 3 4 mb D Simplified outline Graphic symbol G mbb076 S SOT669 (LFPAK) 3. Ordering information Table 3. Ordering inform...