PH3830L
www.DataSheet4U.com
M3D748
N-channel TrenchMOS™ logic level FET
Rev. 03 — 2 March 2004 Product data
1. Product...
PH3830L
www.DataSheet4U.com
M3D748
N-channel TrenchMOS™ logic level FET
Rev. 03 — 2 March 2004 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Low thermal resistance s Logic level gate drive s SO8 equivalent area footprint s Low on-state resistance.
1.3 Applications
s DC-to-DC converters s Portable appliances s Switched-mode power supplies s Notebook computers.
1.4 Quick reference data
s VDS ≤ 30 V s Ptot ≤ 62.5 W s ID ≤ 98 A s RDSon ≤ 3.8 mΩ
2. Pinning information
Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK), simplified outline and symbol Description source (s)
mb d
Simplified outline
Symbol
gate (g) mounting base; connected to drain (d)
g s
MBB076
1
2
3
4
MBL286
Top view
SOT669 (LFPAK)
Philips Semiconductors
PH3830L
N-channel TrenchMOS™ logic level FET
www.DataSheet4U.com
3. Ordering information
Table 2: Ordering information Package Name PH3830L LFPAK Description Plastic single-ended surface mounted package; 4 leads Version SOT669 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS ISM drain-source
voltage (DC) gate-source
voltage drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tm...