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PFP18N50
500V N-Channel MOSFET
Description
Feb 2009 PFP18N50/PFF18N50 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 48.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.26 Ω (Typ.) @VGS=10V APPLICATION High current, High speed switching Suitabl...
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