PF0031

w w at .D w h FET Power Amplifier Module for Mobile Phone MOS S a ADE-208-461 (Z) 1st Edition July 1, 1996 ee U 4 t m o .c PF0031 Application PF0031: For NMT900 890 to 925 MHz Features High stability: Load VSWR ≈ 20:1 Low power control current: 400 µA Thin package: 5 mm t Pin Arrangement RF-B2 w w .D w 5 t a 1 S a 2 e h 3 t e 5 4 U 4 .c m o 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND w w w .D a S a t e e h U 4 t m o .c PF0031 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC VDD Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 10 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line) Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current APC voltage Input power Operating case temperature Storage temperature Symbol VDD I DD VAPC Pin Tc (op) Tstg Rating 17 3 8 20 –30 to +100 –40 to +110 Unit V A V mW °C °C 2 PF0031 Electrical Characteristics (Tc = 25°C) Item Drain cutoff current Total efficiency Symbol I DS ηT Min — 35 — — — — Typ — 40 –50 –50 1.5 1.5 Max 500 — –30 –30 3 — Unit µA % dB dB — — Pin = 2 mW, VDD = 12.5 V, Pout = 6 W (at APC controlled), RL = Rg = 50 Ω, Output VSWR = 20:1 All phases, t = 20sec Test Condition VDD = 17 V, VAPC = 0 V, Rg = RL= 50 Ω Pin = 2 mW, VDD = 12.5 V, Pout = 6 W (at APC controlled) RL = Rg = 50 Ω 2nd harmonic distortion 2nd H....