PEMB3

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB3 PNP resistor-equipped double transistor R1 = 4.7 kΩ, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 4.7 kΩ, R2 = open FEATURES 300 mW total power dissipation Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package Excellent coplanarity due to straight leads Reduces number of components as replacement of two SC-75/SC-89 packaged transistors Reduces required board space Reduces pick and place costs. APPLICATIONS General purpose switching and amplification Inverter and interface circuits Circuit driver. DESCRIPTION PNP resistor-equipped double transistor in a SOT666 plastic package. MARKING TYPE NUMBER PEMB3 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 MBK120 PEMB3 QUICK REFERENCE DATA SYMBOL VCEO ICM TR1 TR2 R1 PARAMETER collector-emitter voltage peak collector current PNP PNP bias resistor MAX. −50 −100 − − 4.7 UNIT V mA − − kΩ handbook, halfpage 6 5 4 6 5 4 R1 TR1 R1 TR2 1 Top view 2 3 MAM452 1 2 3 Fig.1 MARKING CODE Z3 Simplified outline (SOT666) and symbol. 2, 5 1, 4 6, 3 Fig.2 Equivalent inverter symbol. 2001 Sep 14 2 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 4.7 kΩ, R2 = open LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEB...