PEMB11

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB11 PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Preliminary specification 2001 Sep 13 Philips Semiconductors Preliminary specification PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ FEATURES 300 mW total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package Excellent coplanarity due to straight leads Replaces two SC-75/SC-89 packaged transistors on same PCB area Reduces required PCB area Reduced pick and place costs. APPLICATIONS General purpose switching and amplification Inverter and interface circuits Circuit driver. DESCRIPTION PNP resistor-equipped transistors in a SOT666 plastic package. MARKING TYPE NUMBER PEMB11 MARKING CODE B1 1 Top view TR1 6 PEMB11 QUICK REFERENCE DATA SYMBOL VCEO ICM TR1 TR2 R1 R2 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current PNP PNP bias resistor bias resistor MAX. −50 −100 − − 10 10 UNIT V mA − − kΩ kΩ handbook, halfpage 6 5 4 5 4 R1 R2 TR2 R2 R1 2 3 1 MAM451 2 3 Fig.1 Simplified outline (SOT666) and symbol. 2, 5 1, 4 MBK120 6, 3 Fig.2 Equivalent inverter symbol. 2001 Sep 13 2 Philips Semiconductors Preliminary specification PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS − − − − − − − Tamb ≤ 25 °C; note...