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PE40F Datasheet

Part Number PE40F
Manufacturers SanRex Corporation
Logo SanRex Corporation
Description THYRISTOR MODULE
Datasheet PE40F DatasheetPE40F Datasheet (PDF)

www.DataSheet4U.com THYRISTOR MODULE PK(PD,PE,KK)40F UL:E76102 M Power Thyristor/Diode Module PK40F series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package and electrically isolated mounting base make your mechanical design easy. IT(AV) 40A, IT(RMS) 62A, ITSM 1300A di/dt 150 A/ s dv/dt 500V/ s Applications Various rectifiers .

  PE40F   PE40F






Part Number PE40P70K
Manufacturers semi one
Logo semi one
Description P-Channel Enhancement Mode Power MOSFET
Datasheet PE40F DatasheetPE40P70K Datasheet (PDF)

P-Channel Enhancement Mode Power MOSFET Description The PE40P70K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-40V,ID =-70A RDS(ON) <10mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process techno.

  PE40F   PE40F







Part Number PE40P5
Manufacturers semi one
Logo semi one
Description P-Channel Enhancement Mode Power MOSFET
Datasheet PE40F DatasheetPE40P5 Datasheet (PDF)

PE40P5 P-Channel Enhancement Mode Power MOSFET Description The PE40P5 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. General Features ● VDS = -40V,ID = -5.3A RDS(ON) < 126mΩ @ VGS=-4.5V RDS(ON) < 85mΩ @ VGS=-10V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● Battery applicat.

  PE40F   PE40F







Part Number PE40P13S
Manufacturers semi one
Logo semi one
Description P-Channel Enhancement Mode Power MOSFET
Datasheet PE40F DatasheetPE40P13S Datasheet (PDF)

http://www.semi-one.com Pb Free Product PE40P13S P-Channel Enhancement Mode Power MOSFET Description The PE40P13S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-40V,ID =-13A RDS(ON) <12mΩ @ VGS=-10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Applicatio.

  PE40F   PE40F







Part Number PE40P07S
Manufacturers semi one
Logo semi one
Description P-Channel Enhancement Mode Power MOSFET
Datasheet PE40F DatasheetPE40P07S Datasheet (PDF)

http://www.semi-one.com Pb Free Product PE40P07S P-Channel Enhancement Mode Power MOSFET Description The PE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-40V,ID =-6.2A RDS(ON) <25mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good h.

  PE40F   PE40F







Part Number PE40N65
Manufacturers semi one
Logo semi one
Description N-Channel Enhancement Mode Power MOSFET
Datasheet PE40F DatasheetPE40N65 Datasheet (PDF)

N-Channel Enhancement Mode Power MOSFET Description The PE40N65 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. PE40N65 General Features ● VDS =40V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Applicatio.

  PE40F   PE40F







THYRISTOR MODULE

www.DataSheet4U.com THYRISTOR MODULE PK(PD,PE,KK)40F UL:E76102 M Power Thyristor/Diode Module PK40F series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package and electrically isolated mounting base make your mechanical design easy. IT(AV) 40A, IT(RMS) 62A, ITSM 1300A di/dt 150 A/ s dv/dt 500V/ s Applications Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches 25 12.5 12 K1 G1 K2 G2 M5X10 2.8 #110TAB PK PE 31max 19.5 80 0.2 PD KK Maximum Ratings Ratings Symbol Item PK40F40 PD40F40 PE40F40 KK40F40 400 480 400 PK40F80 PD40F80 PE40F80 KK40F80 800 960 800 PK40F120 PD40F120 PE40F120 KK40F120 1200 1300 1200 PK40F160 PD40F160 PE40F160 KK40F160 1600 1700 1600 Ratings 40 62 1200/1300 7200 10 3 3 10 5 150 2500 40 125 40 125 2.7 28 2.7 28 170 Unit VRRM VRSM VDRM Symbol IT AV IT RMS ITSM I2t PGM PG AV IFGM VFGM VRGM di dt VISO Tj Tstg 6.5 29max Unit A 3.5 7.5 3.5 2- 6 20 20 92 20 17.5 Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Item Average On-State Current R.M.S. On-State Current Surge On-State Current I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage (Forward) Peak Gate Voltage (Reverse) Critical Rate of Rise of On-State Current Isolation Breakdown Voltage (R.M.S.


2006-12-29 : 05W580EWC    2MBI100U4A-120    2MBI100UA-120    2MBI200U2A-060    2MBI200U4B-120    2MBI200UC-120    2MBI300UE-120    2MBI450UE-120    30SPA0553    6R1MBI100P-160   


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