PDTA114EK

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D114 PDTA114EK PNP resistor-equipped transistor Product specification Supersedes data of 1997 Jul 04 File under Discrete Semiconductors, SC04 1998 May 19 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 10 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. 3 PDTA114EK 3 R1 1 R2 2 1 Top view 2 MAM262 Fig.1 Simplified outline (SC-59) and symbol. DESCRIPTION PNP resistor-equipped transistor in an SC-59 plastic package. NPN complement: PDTC114EK. 1 3 2 MARKING TYPE NUMBER PDTA114EK MARKING CODE 03 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = −5 mA; VCE = −5 V CONDITIONS open base − − − − 30 7 0.8 MIN. − − − − − 10 1 TYP. MAX. −50 −100 −100 250 − 13 1.2 kΩ UNIT V mA mA mW 1998 May 19 2 Philips Semiconductors Product specification PNP resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC...