IGBT
QS043-402-20371(2/5)
IGBT Module-Dual
□ : CIRCUIT
PDMB200BS12
200 A,1200V
PDMB200BS12C
□ : OUTLINE DRAWING
1...
Description
QS043-402-20371(2/5)
IGBT Module-Dual
□ : CIRCUIT
PDMB200BS12
200 A,1200V
PDMB200BS12C
□ : OUTLINE DRAWING
108 93 ± 0 .2 5 14 11 14 11 14
3-M6
7(G2) 6(E2)
4-Ø 6.5
12.0 11.0 12.0 11.0 12.0
94.0 80 ±0.25
62 11 13 20
6
15 6 48 ± 0 .2 5
(C2E1) 1
(E2) 2
(C1) 3
2-Ø6.5 4
4-fasten tab #110 t=0.5 21.2 7.5 7
1 2 3
7
1 48.0 16.0 14.0
2
3
7 6
5(E1) 4(G1)
5 4
5 4
6
3-M5
23.0
23.0
17.0
25
16 9 16
25
9 16
24
14 9 14 9 14
30 +1.0 - 0.5
8
PDMB200BS12
□ : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage コ レ ク タ Collector Current コ レ ク タ Collector Power Dissipation Junction Temperature Range Storage Temperature Range (Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink め け ト ル ク Mounting Torque Busbar to Main Terminal □ DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor Rated
7
23
LABEL
30 +1.0 - 0 .5
LABEL
PDMB200BS12
Dimension:[mm]
Value
4 18.0
Unit V V A W ℃ ℃ V(RMS) 3 ( 3 0 .6 ) ( 2 0 .4 ) 2 N・m (kgf・cm)
1,200 ±20 200 400 1,200 -40~+150 -40~+125 2,500
PDMB200BS12
3 ( 3 0 .6 ) 3 ( 3 0 .6 )
PDMB200BS12C
: ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies ターンオン ターンオフ Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 1200V,VGE= 0V VGE= ±20V,VCE= 0V IC= 200A,VGE= 15V VCE= 5V,IC= 200mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= 600V RL= 3.0Ω RG= 7.5Ω VGE= ±15V Min. - - - 4.0 - - - - - Typ. -...
Similar Datasheet
- PDMB200BS12C IGBT - Nihon Inter Electronics Corporation