30V P-Channel MOSFETs
PDC3905Z
General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
PPAK3x3 Pin Configuration
DDDD S S SG
G
D S
BVDSS -30V
RDSON 15mΩ
.
30V P-Channel MOSFETs
30V P-Channel MOSFETs
PDC3905Z
General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
PPAK3x3 Pin Configuration
DDDD S S SG
G
D S
BVDSS -30V
RDSON 15mΩ
ID -30A
Features -30V,-30A, RDS(ON) =18mΩ@VGS = -10V Fast switching Green Device Available Suit for -4.5V Gate Drive Applications
Applications
MB / VGA / Vcore POL Applications Load Switch LED Application
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipation (TC=25℃) Power Dissipation – Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range
Rating
-30
±20 -30 -19 -120 23 0.18 -55 to 150 -55 to 150
Units V V A A A W
W/℃ ℃ ℃
Thermal Characteristics
Symbol RθJA RθJC
Parameter Thermal Resistance Junction to ambient Thermal Resistance Junction to Case
Typ. -----
Max. 62 5.4
Unit ℃/W ℃/W
Potens semiconductor corp.
1
Ver.1.00
30V P-Channel MOSFETs
PDC3905Z
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Off Characteristics
.