RefTitle1 PD84008L-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V ■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC european directive
Description
The PD84008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial appl.
RF power transistor
RefTitle1 PD84008L-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V ■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC european directive
Description
The PD84008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. PD84008L-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in leadless SMD plastic RF power package, PowerFLAT™.
PowerFLATTM (5 mm x 5 mm) Figure 1. Pin connection
Table 1. Device summary Order code PD84008L-E
Marking 84008
Package PowerFLATTM
Packing Tape and reel
February 2011
Doc ID 14228 Rev 3
1/14
www.st.com
14
Contents
Contents
PD84008L-E
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..