(1) Built-in direct drive circuit for MOS-FET/IGBT drive (IO1P, IO2P : 0.4 A) (2) High speed response (tPHL,tPLH : MAX.0.5 µs) (3) Wide operating supply voltage range (VCC : 15 to 30 V, Ta= -10 to 60 ˚C ) (4) High noise reduction type (CMH=MIN.-1 5...