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PC48F4400P0TB0EE Datasheet

Part Number PC48F4400P0TB0EE
Manufacturers Micron
Logo Micron
Description Parallel NOR Flash Embedded Memory
Datasheet PC48F4400P0TB0EE DatasheetPC48F4400P0TB0EE Datasheet (PDF)

256Mb and 512Mb (256Mb/256Mb), P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm) RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF, PC28F256P33TFE, PC28F256P33BFE, PC28F256P33BFF, PC28F256P33BFR, RC48F4400P0TB0EJ, PC48F4400P0TB0EE, PC48F4400P0TB0EH, JS28F256P33TFE, JS28F256P33BFE Features • High performance – 95ns initial access for Easy BGA – 105ns initial access for TSOP – 25ns 16-word asychronous page read mode – 52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-dat.

  PC48F4400P0TB0EE   PC48F4400P0TB0EE






Part Number PC48F4400P0TB0EH
Manufacturers Micron
Logo Micron
Description Parallel NOR Flash Embedded Memory
Datasheet PC48F4400P0TB0EE DatasheetPC48F4400P0TB0EH Datasheet (PDF)

256Mb and 512Mb (256Mb/256Mb), P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm) RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF, PC28F256P33TFE, PC28F256P33BFE, PC28F256P33BFF, PC28F256P33BFR, RC48F4400P0TB0EJ, PC48F4400P0TB0EE, PC48F4400P0TB0EH, JS28F256P33TFE, JS28F256P33BFE Features • High performance – 95ns initial access for Easy BGA – 105ns initial access for TSOP – 25ns 16-word asychronous page read mode – 52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-dat.

  PC48F4400P0TB0EE   PC48F4400P0TB0EE







Parallel NOR Flash Embedded Memory

256Mb and 512Mb (256Mb/256Mb), P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm) RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF, PC28F256P33TFE, PC28F256P33BFE, PC28F256P33BFF, PC28F256P33BFR, RC48F4400P0TB0EJ, PC48F4400P0TB0EE, PC48F4400P0TB0EH, JS28F256P33TFE, JS28F256P33BFE Features • High performance – 95ns initial access for Easy BGA – 105ns initial access for TSOP – 25ns 16-word asychronous page read mode – 52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode – 4-, 8-, 16-, and continuous word options for burst mode – Buffered enhanced factory programming (BEFP) at 2 MB/s (TYP) using a 512-word buffer – 3.0V buffered programming at 1.14 MB/s (TYP) using a 512-word buffer • Architecture – MLC: highest density at lowest cost – Asymmetrically blocked architecture – Four 32KB parameter blocks: top or bottom configuration – 128KB main blocks – Blank check to verify an erased block • Voltag.


2017-12-18 : VN0210N5    VN0210N3    VN0210N2    2N6659-2    VN0206N5    VN0206N2    VN0206N3    VN0204N2    VN0204N5    TP0602   


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