DatasheetsPDF.com

PBSS5240X Datasheet

Part Number PBSS5240X
Manufacturers nexperia
Logo nexperia
Description PNP transistor
Datasheet PBSS5240X DatasheetPBSS5240X Datasheet (PDF)

PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240X. 1.2 Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency due to less heat generation 1.3 Applications • DC-.

  PBSS5240X   PBSS5240X






Part Number PBSS5240X
Manufacturers NXP
Logo NXP
Description transistor
Datasheet PBSS5240X DatasheetPBSS5240X Datasheet (PDF)

PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240X. 1.2 Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency due to less heat generation 1.3 Applications • DC-.

  PBSS5240X   PBSS5240X







PNP transistor

PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240X. 1.2 Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency due to less heat generation 1.3 Applications • DC-to-DC conversion • Supply line switching • Battery charger • LCD backlighting • Driver in low supply voltage applications (e.g. lamps and LEDs) • Inductive load driver (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat ICRM Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current collector-emitter saturation resistance repetitive peak collector current IC = -1 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C tp ≤ 20 ms; δ ≤ 0.33 ; pulsed Min Typ Max Unit - - -40 V - - -2 A - - -3 A - - 310 mΩ - - -2.5 A Nexperia PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 C collector 3 B base Simplified outline 321 SOT89 Graphic symbol C B E sym132 3. Ordering information Table 3. Ordering information Type number Package Name PBSS5240X SOT89 Description Version .


2019-07-21 : PDTA123YS    PDTA123YM    PDTA123YK    PDTA124EM    PDTA143EU    PDTA143ET    PDTA143EM    PDTD123YU    PDTD123EU    PDTD113EU   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)