PBSS4330X

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4330X 30 V, 3 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Nov 28 2004 Dec 06 NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor Product data sheet PBSS4330X FEATURES SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency leading to less heat generation Reduced printed-circuit board requirements. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. UNIT 30 V 3A 5A 100 mΩ APPLICATIONS Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION NPN low VCEsat transistor in a SOT89 plastic package. PINNING PIN 1 emitter 2 collector 3 base DESCRIPTION 321 2 3 1 sym042 MARKING TYPE NUMBER PBSS4330X MARKING CODE(1) *1R Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION TYPE NUMBER PBSS4330X NAME SC-62 PACKAGE DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 2004 Dec 06 2 NXP Semiconductors 30 V, 3 A NPN low VCEs...