PBSS4160V

www.DataSheet4U.com PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 — 31 January 2005 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistor BCP55 and BCX55 1.3 Applications s Major application segments: x Automotive x Telecom infrastructure x Industrial s Power management: x DC-to-DC conversion x Supply line switching s Peripheral driver x Driver in low supply voltage applications (e.g. lamps and LEDs) x Inductive load driver (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1: Symbol VCEO IC ICM RCEsat [1] [2] Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance t = 1 ms or limited by Tj(max) IC = 1 A; IB = 100 mA [2] Conditions open base [1] Min - Typ 200 Max Unit 60 1 2 250 V A A mΩ Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1, 2, 5, 6 3 4 Discrete pinning Description collector base emitter 6 5 4 3 4 sym014 Simplified ou...