PBSS306PZ

www.DataSheet4U.com PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor Rev. 01 — 20 September 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ. 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = −4 A; IB = −400 mA [1] Conditions open base Min - Typ 56 Max −100 −4.1 −8.2 80 Unit V A A mΩ Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description base collector emitter collector 1 2 3 3 sym028 Simplified outline 4 Symbol 2, 4 1 3. Ordering information Table 3. Ordering information Package Name PBSS306PZ SC-73 Descripti...