PBRP123ET

PBRP123ET PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 — 16 January 2008 Product data sheet 1. Product profile 1.1 General description www.DataSheet4U.com 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123ET. 1.2 Features I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads 1.4 Quick reference data Table 1. Symbol VCEO IO IORM R1 R2/R1 [1] [2] [3] Quick reference data Parameter collector-emitter voltage output current repetitive peak output current tp ≤ 1 ms; δ ≤ 0.33 bias resistor 1 (input) bias resistor ratio Conditions open base [1][2] [3] Min 1.54 0.9 Typ 2.2 1 Max −40 −600 −800 2.86 1.1 Unit V mA mA kΩ Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. NXP Semiconductors PBRP123ET PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 2. Pinning information Table 2. Pin...