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PA2423L

SiGe Semiconductor  Inc.

2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information

PA2423L 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetoothtm Class 1 USB Dongl...


SiGe Semiconductor Inc.

PA2423L

File Download Download PA2423L Datasheet


Description
PA2423L 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetoothtm Class 1 USB Dongles Laptops Access Points Cordless Piconets Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423L is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.5 dBm output power with 45% power-added efficiency – making it capable of overcoming insertion losses of up to 2.5 dB between amplifier output and antenna input in tm class 1 Bluetooth applications. The amplifier features: an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation. An on-chip ramping circuit provides the turnon/off switching of amplifier output with less than 3dB overshoot, meeting the Bluetoothtm specification 1.1. The PA2423L operates at 3.3V DC. At typical output power level (+22.5 dBm), its current consumption is 125 mA. The silicon/silicon-germanium structure of the PA2423L – and its exposed-die-pad package, soldered to the system PCB – provide high thermal conductivity and a subsequently low junction temperature. This device is capable of operating at a duty cycle of 100 percent. Features +22.5dBm at 45% Power Added Efficiency Low current 80mA typical @ Pout=+20 dBm Temperature stability better than 1dB Power-control and Power-down modes Single 3.3 V Supply Operation Temperature rating: -40C to +85C Very small plastic...




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