PA010HK

PA010HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 100mΩ @VGS = 10V ID 9.1A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C 9.1 ID 5.7 IDM 25 Continuous Drain Current TA = 25 °C TA = 70 °C 3 ID 2.4 Avalanche Current IAS 6 Avalanche Energy L = 1mH EAS 18 Power Dissipation TC = 25 °C TC = 100 °C 19 PD 7.6 Power Dissipation TA = 25 °C TA = 70 °C 2 PD 1.3 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RqJC 6.5 Junction-to-Ambient RqJA 60 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air en...