P8315ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
83mΩ @VGS = 10V
ID 13.5A
TO-220F...
P8315ATF
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
83mΩ @VGS = 10V
ID 13.5A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 150
Gate-Source
Voltage
VGS ±30
Continuous Drain Current Pulsed Drain Current1
Tc = 25 °C Tc = 100 °C
ID IDM
13.5 8.5 50
Avalanche Current
IAS 17
Avalanche Energy2
EAS 163
Power Dissipation
TC = 25 °C TC = 100 °C
PD
35 14
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature. 2Starting Tj =25 °C,IAS=17A,L=1.1mH,VDD=50V
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 3.6 62.5
UNITS °C / W
REV 1.0 1 2014/7/9
P8315ATF
N-Channel Enhancement Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS UNITS
...
