NIKO-SEM
N-Channel Enhancement Mode Field Effect Transistor
P8010BD
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
...
NIKO-SEM
N-Channel Enhancement Mode Field Effect Transistor
P8010BD
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ
ID 15A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current Avalanche Energy
MOSFET dV/dt Ruggedness Peak Diode Recovery dV/dt2
TC = 25 °C TC = 100 °C
L = 0.1mH
VDS VGS
ID
IDM IAS EAS dV/dt
Power Dissipation Junction & Storage Temperature Range
TC = 25 °C TC = 100 °C
PD TJ, Tstg
1. GATE 2. DRAIN 3. SOURCE
LIMITS 100 ±20 15 9 35 12 7.2 16.2 4.1 46 18
-55 to 150
UNITS V V
A
mJ V/nS
W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature. 2ID=15A,di/dt=100A/uS,VDD
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