P6015AD

P6015AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 60mΩ @VGS = 10V ID 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 25 16 100 Avalanche Current IAS 20 Avalanche Energy L = 0.1mH EAS 20 Power Dissipation TC = 25 °C TC = 100 °C PD 83 33 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJC TYPICAL MAXIMUM UNITS 1.5 °C / W Ver 1.1 1 2013-3-26 P6015AD N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DS...