P5NA80

( DataSheet : www.DataSheet4U.com ) STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA80 STP5NA80FI VDSS 800 V 800 V RDS(on) < 2.4 Ω < 2.4 Ω ID 4.7 A 2.8 A s TYPICAL RDS(on) = 1.8 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM() Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature () Pulse width limited by safe operating area November 1996 3 2 1 TO-220 3 2 1 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Value STP5NA80 STP5NA80FI 800 800 ± 30 4.7 2.8 3 1.8 19 19 125 45 1 0.36  2...