P4532VG

www.DataSheet4U.com NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary) P4532VG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 60mΩ 45mΩ ID 4A -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range 1 SYMBOL VDS VGS N-Channel P-Channel 30 ±20 4 3 12 2 1.3 -55 to 150 -30 ±20 -5 -4 -20 UNITS V V TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C ID IDM PD Tj, Tstg A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 62.5 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA N-Ch P-Ch N-Ch P-Ch 30 -30 1 -1 1.5 -1.5 2.5 -2.5 V MIN TYP MAX UNIT 1 JUL-26-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary) P4532VG SOP-8 Lead-Free VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current IDSS N-Ch P-Ch N-Ch P-Ch ±100 ±100 1 -1 10 -10 12 -20 72 58 48 34 1...