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P3606BD
N-Channel Transistor
Description
P3606BD N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 36mΩ @VGS = 10V ID 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source
Voltage
VDS 60 Gate-Source
Voltage
VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM ...
UNIKC
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