P3057LCG

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3057LCG SOT-89 Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50mΩ ID 6A 3 G S SYMBOL VGS TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C ID IDM PD Tj, Tstg TL LIMITS ±20 6 4 20 3 1.2 -55 to 150 275 1 1. GATE 2. DRAIN 3. SOURCE www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 2 UNITS V A W Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 1 °C SYMBOL RθJC RθJA TYPICAL MAXIMUM 18 160 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 4.5V, ID = 3A VGS = 10V, ID = 6A VDS = 15V, ID = 6A 6 70 48 16 115 85 25 0.8 1.2 2.5 V LIMITS UNIT MIN TYP MAX ±250 nA 25 250 µA A mΩ S 1 Jun-29-2004 NIKO-SEM N-Channel Logic Lev...