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STP2N60 STP2N60FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STP2N60 STP2N60FI
s s s s s
V DSS 600 V 600 V
R DS( on) < 3.5 Ω < 3.5 Ω
ID 2.9 A 2.2 A
TYPICAL RDS(on) = 3.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION TO-220
3 1 2 1 2
3
APPLIC...
