DatasheetsPDF.com

P2806AT Datasheet

Part Number P2806AT
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P2806AT DatasheetP2806AT Datasheet (PDF)

P2806AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 30mΩ @VGS = 10V ID 34A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 34 21 110 Avalanche Current IAS 29 Avalanche Energy L = 0.1mH EAS 41 Power Dissipation TC = 25 °C TC = 100 °C PD 58 23 Operating Junction & Storage Temperatu.

  P2806AT   P2806AT






Part Number P2806AT
Manufacturers NIKO-SEM
Logo NIKO-SEM
Description N-Channel Transistor
Datasheet P2806AT DatasheetP2806AT Datasheet (PDF)

NIKO-SEM N-Channel Enhancement Mode P2806AT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 30mΩ ID 34A D G 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & S.

  P2806AT   P2806AT







N-Channel MOSFET

P2806AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 30mΩ @VGS = 10V ID 34A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 34 21 110 Avalanche Current IAS 29 Avalanche Energy L = 0.1mH EAS 41 Power Dissipation TC = 25 °C TC = 100 °C PD 58 23 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.15 62.5 UNITS °C / W Ver 1.0 1 2012/4/13 P2806AT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold V.


2017-02-01 : AM2N-NZ    AM2N-2405DH60-NZ    P1212AT    P1065AT    P1060AT    P0460AS    P0460AT    P1350AT    P8010BT    PA410BTF   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)